Patent attributes
A monolithic photo detector device disposed on a bulk substrate, comprising a photo detector disposed integrated in the bulk substrate including: (1) a p-type doped impurity region extending along a first direction in the major surface of the substrate and receiving a first voltage, (2) first and second gates being spaced apart from each other and extending in the first direction over the major surface of the substrate, wherein the gates receives a second voltage, (3) an n-type doped impurity region, extending along the first direction in the major surface of the substrate and receiving a third voltage; and (4) a light absorbing region, disposed between the second doped impurity region and the first gate. The device also includes control circuitry, integrated in the substrate to generate the first, second and third voltages that control an operating state of the detector.
