US Patent 9741674 Semiconductor device
Patent 9741674 was granted and assigned to Mitsubishi Electric Corporation on August, 2017 by the United States Patent and Trademark Office.
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A semiconductor device includes a semiconductor substrate in which a through hole is formed, a transistor formed on the upper surface side of the semiconductor substrate, a detection circuit formed on the upper surface side of the semiconductor substrate and connected to the transistor, a dielectric film covering the transistor and the detection circuit, a solder bump formed on the dielectric film, and a pad electrode having a first portion connected to an output of the detection circuit in the through hole, and a second portion connected to the first portion and provided on a lower surface of the semiconductor substrate.
US Patent 09741674 Semiconductor device US Patent 9741674 Semiconductor device
US Patent 09741674 Semiconductor device
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