Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
September 5, 2017
Patent Application Number
15057439
Date Filed
March 1, 2016
Patent Citations Received
Patent Primary Examiner
Patent abstract
Nanosheet semiconductor devices and methods of forming the same include forming a first nanosheet stack in a first device region with layers of a first channel material and layers of a sacrificial material. A second nanosheet stack is formed in a second device region with layers of a second channel material, layers of the sacrificial material, and a liner formed around the layers of the second channel material. The sacrificial material is etched away, but the liner protects the second channel material from the etch. Gate stacks are formed over and around the layers of first and second channel material to form respective first and second semiconductor devices in the first and second device regions.
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