Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yang Liu0
Ari Novack0
Yi Zhang0
Date of Patent
September 5, 2017
Patent Application Number
14818060
Date Filed
August 4, 2015
Patent Citations Received
Patent Primary Examiner
Patent abstract
A lateral Ge/Si APD constructed on a silicon-on-insulator wafer includes a silicon device layer having regions that are doped to provide a lateral electric field and an avalanche region. A region having a modest doping level is in contact with a germanium body. There are no metal contacts made to the germanium body. The electrical contacts to the germanium body are made by way of the doped regions in the silicon device layer.
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