Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Bencherki Mebarki0
He Ren0
Huixiong Dai0
Mehul Naik0
Yongmei Chen0
Date of Patent
September 12, 2017
Patent Application Number
13987667
Date Filed
August 20, 2013
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method of forming an interconnect structure for semiconductor or MEMS structures at a 10 nm Node (16 nm HPCD) down to 5 nm Node (7 nm HPCD), or lower, where the conductive contacts of the interconnect structure are fabricated using solely subtractive techniques applied to conformal layers of conductive materials.
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