US Patent 9761599 Integrated structures containing vertically-stacked memory cells
Patent 9761599 was granted and assigned to Micron Technology on September, 2017 by the United States Patent and Trademark Office.
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Patent abstract
Some embodiments include an integrated structure having a stack of alternating dielectric levels and conductive levels, and having vertically-stacked memory cells within the conductive levels. An opening extends through the stack. Channel material is within the opening and along the memory cells. At least some of the channel material contains germanium.
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US Patent 09761599 Integrated structures containing vertically-stacked memory cells US Patent 9761599 Integrated structures containing vertically-stacked memory cells
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Patent Number
0976159900
Patent Number
976159900
Edits on 4 Apr, 2023
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Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
097615990
Date of Patent
September 12, 2017
0Patent Application Number
148276950
Date Filed
August 17, 2015
0Patent Primary Examiner
Edits on 5 Oct, 2022
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Infobox
Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
097615990
Date of Patent
September 12, 2017
0Patent Application Number
148276950
Date Filed
August 17, 2015
0Patent Primary Examiner
Edits on 14 Jan, 2022
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US Patent 09761599 Integrated structures containing vertically-stacked memory cells
Infobox
Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
09761599
Date of patent
September 12, 2017
Patent application number
14827695
Date Filed
August 17, 2015
Patent primary examiner
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