US Patent 9761707 Laterally diffused MOSFET with isolation region

A device formed in a semiconductor substrate is disclosed. The device include a core device formed in the semiconductor substrate, a first deep trench isolation barrier surrounding the core device and a secondary device formed in the semiconductor substrate outside the deep trench isolation barrier. The device also includes a second deep trench isolation barrier formed to isolate the secondary device from remaining part of the semiconductor substrate. A first portion of the secondary device is electrically connected to a first portion of the core device through a first electrical connector and a second portion of the secondary device is electrically connected to a second portion of the core device through a second electrical connector.