US Patent 9768211 Integrated avalanche photodiode arrays

A photodetector includes an array of pixels, each pixel comprising a defined doped region defined in a doped semiconductor layer. The defined doped region is defined by selected regions of ion implants to provide resistive isolation between each defined doped region. A capacitor is formed by the defined doped region and a metal layer disposed above the doped semiconductor layer. A contact metal line is disposed above the doped semiconductor layer. The capacitor metal and contact metal lines are electrically coupled together and are in electrical communication with the output of the photodetector array.