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US Patent 9773753 Semiconductor devices and methods of manufacturing the same

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Is a
Patent
Patent

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
9773753
Date of Patent
September 26, 2017
Patent Application Number
15356400
Date Filed
November 18, 2016
Patent Citations Received
‌
US Patent 11670601 Stacking via structures for stress reduction
0
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US Patent 12094828 Eccentric via structures for stress reduction
0
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US Patent 11855008 Stacking via structures for stress reduction
0
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US Patent 11749644 Semiconductor device with curved conductive lines and method of forming the same
Patent Primary Examiner
‌
S. V. Clark
Patent abstract

A semiconductor device includes a first die, a second die, an encapsulant, a first dielectric layer, and at least one first trace. The first die includes a first surface and a second surface opposite to the first surface and includes at least one first pad disposed adjacent to the first surface of the first die. The second die includes a first surface and a second surface opposite to the first surface and includes at least one second pad disposed adjacent to the first surface of the second die. The first dielectric layer is disposed on at least a portion of the first surface of the first die and at least a portion of the first surface of the second die. The first trace is disposed on the first dielectric layer, which connects the first pad to the second pad, and the first trace comprises an end portion disposed adjacent to the first pad and a body portion, and the end portion extends at an angle θ1 relative to a direction of extension of the body portion.

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