US Patent 9786743 Semiconductor device with electron supply layer
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Patent abstract
A semiconductor device includes a semiconductor stacked structure including at least an electron transit layer and an electron supply layer over a substrate. The electron supply layer includes a first portion and second portions sandwiching the first portion, and the first portion has a higher energy of a conduction band than that of the second portion, and includes a doped portion doped with an n-type impurity and undoped portions that sandwich the doped portion and are not doped with an impurity.
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Patent Inventor Names
Akira Endoh0
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US Patent 09786743 Semiconductor device with electron supply layer US Patent 9786743 Semiconductor device with electron supply layer
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Patent Number
097867430
Patent Number
97867430
Edits on 26 Apr, 2023
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Patent Jurisdiction
Patent Number
097867430
Date of Patent
October 10, 2017
0Patent Application Number
148289950
Date Filed
August 18, 2015
0Patent Primary Examiner
Edits on 15 Jan, 2022
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US Patent 09786743 Semiconductor device with electron supply layer
Infobox
Is a
Patent jurisdiction
Patent number
09786743
Date of patent
October 10, 2017
Patent application number
14828995
Date Filed
August 18, 2015
Patent primary examiner
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