Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Christopher J. Penny0
Griselda Bonilla0
Son Nguyen0
Takeshi Nogami0
Deepika Priyadarshini0
Elbert Huang0
Date of Patent
October 17, 2017
Patent Application Number
15299906
Date Filed
October 21, 2016
Patent Citations Received
Patent Primary Examiner
Patent abstract
Embodiments are directed to a method of forming a semiconductor device and resulting structures having an air spacer between a gate and a contact by forming a gate on a substrate and over a channel region of a semiconductor fin. A contact is formed on a doped region of the substrate such that a space between the contact and the gate defines a trench. A first dielectric layer is formed over the gate and the contact such that the first dielectric layer partially fills the trench. A second dielectric layer is formed over the first dielectric layer such that an air spacer forms in the trench between the gate and the contact.
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