Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
October 17, 2017
Patent Application Number
15287134
Date Filed
October 6, 2016
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method of fabricating features of a vertical transistor include performing a first etch process to form a first portion of a fin in a substrate; depositing a spacer material on sidewalls of the first portion of the fin; performing a second etch process using the spacer material as a pattern to elongate the fin and form a second portion of the fin in the substrate, the second portion having a width that is greater than the first portion; oxidizing a region of the second portion of the fin beneath the spacer material to form an oxidized channel region; and removing the oxidized channel region to form a vacuum channel.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
