US Patent 9793417 Nanowire nanoelectromechanical field-effect transistors

A three-terminal nano-electro-mechanical field-effect transistor (NEMFET) includes a source electrode, a gate electrode, a drain electrode and a nanoelectromechanically suspended channel bridging the source electrode and the drain electrode. The nanoelectromechanically suspended channel includes a moveable nanowire and a dielectric coating on a surface of the nanowire facing the gate electrode. A thickness of a gap between the nanowire and the gate electrode is determined by a thickness of the dielectric coating.