Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Jeffrey Junhao Xu0
Niladri Narayan Mojumder0
Stanley Seungchul Song0
Vladimir Machkaoutsan0
Choh Fei Yeap0
Da Yang0
John Jianhong Zhu0
Junjing Bao0
...
Date of Patent
October 24, 2017
Patent Application Number
14853670
Date Filed
September 14, 2015
Patent Citations Received
Patent Primary Examiner
Patent abstract
A fin-type semiconductor device includes a gate structure and a source/drain structure. The fin-type semiconductor device also includes a gate hardmask structure coupled to the gate structure. The gate hardmask structure comprises a first material. The fin-type semiconductor device further includes a source/drain hardmask structure coupled to the source/drain structure. The source/drain hardmask structure comprises a second material.
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