Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kunitoshi Namba0
Dai Ishikawa0
Shang Chen0
Takahiro Onuma0
Toshiharu Watarai0
Date of Patent
October 31, 2017
0Patent Application Number
151771980
Date Filed
June 8, 2016
0Patent Citations Received
Patent Primary Examiner
Patent abstract
Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.
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