Is a
Patent attributes
Patent Applicant
Patent Jurisdiction
Patent Number
Date of Patent
October 31, 2017
Patent Application Number
14878952
Date Filed
October 8, 2015
Patent Citations Received
Patent Primary Examiner
Patent abstract
Methods and structures for improving the performance of integrated semiconductor transistors operating at high frequency and/or high power are described. Two capacitors may be connected to an input of a semiconductor transistor and tuned to suppress second-harmonic generation and to transform and match the input impedance of the device. A two-stage tuning procedure is described. The transistor may comprise gallium nitride and may be configured as a power transistor capable of handling up to 1000 W of power. A tuned transistor may operate at frequencies up to 6 GHz with a peak drain efficiency greater than 60%.
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