Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Taeseung Kim0
Wenbing Yang0
Jeffrey Marks0
Samantha Tan0
Thorsten Lill0
Date of Patent
October 31, 2017
0Patent Application Number
147492910
Date Filed
June 24, 2015
0Patent Citations Received
Patent Primary Examiner
Patent abstract
Methods of etching metal by depositing a material reactive with a metal to be etched and a halogen to form a volatile species and exposing the substrate to a halogen-containing gas and activation gas to etch the substrate are provided. Deposited materials may include silicon, germanium, titanium, carbon, tin, and combinations thereof. Methods are suitable for fabricating MRAM structures and may involve integrating ALD and ALE processes without breaking vacuum.
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