Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
December 5, 2017
Patent Application Number
14964412
Date Filed
December 9, 2015
Patent Citations Received
Patent Primary Examiner
Patent abstract
Systems, methods, and apparatus for an improved protection from charge injection into layers of a device using resistive structures are described. Such resistive structures, named s-contacts, can be made using simpler fabrication methods and less fabrication steps. In a case of metal-oxide-semiconductor (MOS) field effect transistors (FETs), s-contacts can be made with direct connection, or resistive connection, to all regions of the transistors, including the source region, the drain region and the gate.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.