Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
December 19, 2017
Patent Application Number
15342333
Date Filed
November 3, 2016
Patent Citations Received
Patent Primary Examiner
Patent abstract
High field-effect mobility is provided for a transistor including an oxide semiconductor. Further, a highly reliable semiconductor device including the transistor is provided. In a bottom-gate transistor including an oxide semiconductor layer, an oxide semiconductor layer functioning as a current path (channel) of the transistor is sandwiched between oxide semiconductor layers having lower carrier densities than the oxide semiconductor layer. In such a structure, the channel is formed away from the interface of the oxide semiconductor stacked layer with an insulating layer in contact with the oxide semiconductor stacked layer, i.e., a buried channel is formed.
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