Patent attributes
A light emitting diode includes an n-type semiconductor layer disposed on a substrate; a p-type semiconductor layer disposed on a portion of the n-type semiconductor layer; an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer and generating light through recombination of electrons and holes; an ohmic contact layer disposed on the p-type semiconductor layer and including an indium tin oxide (ITO) layer doped with a metal, a transparent conductive layer disposed on the ohmic contact layer to a different thickness than the ohmic contact layer and including an undoped ITO layer, and a reflective layer disposed on the transparent conductive layer and including an oxide layer. Accordingly, the light emitting diode exhibits excellent current-voltage characteristics through improvement in reliability and electrical conductivity of the ohmic contact layer while improving luminous efficacy through the reflective layer formed of an oxide.
