Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
December 26, 2017
Patent Application Number
15231087
Date Filed
August 8, 2016
Patent Citations Received
Patent Primary Examiner
Patent abstract
After forming an epitaxial germanium layer over a germanium-on-insulator substrate including an insulator layer and a doped germanium layer overlying the insulator layer, the doped germanium layer is selectively removed and a passivation layer is formed within a space between the epitaxial germanium layer and the insulator layer that is formed by removal of the doped germanium layer. A lateral bipolar transistor is subsequently formed in the epitaxial germanium layer.
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