Patent attributes
Disclosed is a light emitting diode using light of a short wavelength band. The light emitting diode includes a first conductivity type semiconductor layer having a front side and a back side, a second conductivity type semiconductor layer having a front side and a back side, an active layer formed between the back side of the first conductivity type semiconductor layer and the front side of the second conductivity type semiconductor layer, a first electrode electrically connected to the first conductivity type semiconductor layer, a second conductivity type reflective layer formed on the back side of the second conductivity type semiconductor layer, and a reflective part formed on the second conductivity type reflective layer to reflect light of a short wavelength band and light of a blue wavelength band and electrically connected to the second conductivity type semiconductor layer. The second conductivity type reflective layer includes DBR unit layers. Each of the DBR unit layers includes a low refractive index layer and a high refractive index layer adjacent to the low refractive index layer. The low refractive index layer and the high refractive index layer include AlxGa1-xN (0<x≦1) and AlyGa1-yN (0≦y<1, y<x), respectively.
