Is a
Patent attributes
Patent Applicant
0
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hong Liao0
Xin Xu0
Bo Liu0
Chao Jiang0
Lanxiang Wang0
Date of Patent
January 2, 2018
0Patent Application Number
153420980
Date Filed
November 2, 2016
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A method for fabricating memory device includes the steps of: providing a substrate; forming a tunnel oxide layer on the substrate; forming a first gate layer on the tunnel oxide layer; forming a negative capacitance (NC) insulating layer on the first gate layer; and forming a second gate layer on the NC insulating layer. Preferably, the second gate layer further includes a work function metal layer on the NC insulating layer and a low resistance metal layer on the work function metal layer.
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