Patent attributes
A method for forming a semiconductor device comprises forming a sacrificial gate stack on a substrate, spacers adjacent to the sacrificial gate stack, and a source/drain region on the substrate. A first insulator layer is formed on the source/drain region. A portion of the first insulator layer is removed to expose portions of the spacers. Exposed sidewall portions of the spacers are removed to reduce a thickness of the exposed portions of the spacers. A protective layer is deposited over the exposed sidewalls of the spacers and a second insulator layer is deposited over the protective layer. The sacrificial gate is removed to expose a channel region of the substrate. A gate stack is formed over the channel region of the substrate. Exposed portions of the first insulator layer and the second insulator layer are removed to expose the source/drain region, and a conductive is formed on the source/drain region.
