Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hotaka Maruyama0
Gaku Shimoda0
Masafumi Urakawa0
Masahiro Ogasawara0
Takanori Sato0
Date of Patent
January 9, 2018
0Patent Application Number
151333140
Date Filed
April 20, 2016
0Patent Citations Received
...
Patent Primary Examiner
Patent abstract
A method for etching a silicon film formed on a substrate includes supplying HBr gas, NF3 gas, and O2 gas into a chamber and performing a plurality of etching processes on the silicon film with a plasma generated by the supplied HBr gas, NF3 gas, and O2 gas, gradually reducing a flow rate of the HBr gas during the plurality of etching processes, and adjusting a flow rate of the O2 gas according to the reduction of the HBr gas.
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