Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Takushi Shigetoshi0
Date of Patent
January 9, 2018
Patent Application Number
14505006
Date Filed
October 2, 2014
Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device includes a wiring layer that includes at least one low-dielectric rate interlayer insulating film layer; a guard ring that is formed by placing in series a wire and a via so as to be in contact with a through electrode, in a portion in which the through electrode passing through the wiring layer is formed; and the through electrode that is formed by being buried inside the guard ring.
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