US Patent 9871191 Magnetic random access memory with ultrathin reference layer
Patent 9871191 was granted and assigned to Avalanche Technology Inc. on January, 2018 by the United States Patent and Trademark Office.
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The present invention is directed to an MRAM device comprising a plurality of MTJ memory elements. Each of the memory elements includes a magnetic free layer and a first magnetic reference layer with an insulating tunnel junction layer interposed therebetween; a second magnetic reference layer formed adjacent to the first magnetic reference layer opposite the insulating tunnel junction layer; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer opposite the first magnetic reference layer; and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. The magnetic free layer has a variable magnetization direction substantially perpendicular to the layer plane thereof. The first and second magnetic reference layers have a first fixed magnetization direction substantially perpendicular to the layer planes thereof. The magnetic fixed layer has a second fixed magnetization direction that is substantially perpendicular to the layer plane thereof and is substantially opposite to the first fixed magnetization direction.
US Patent 09871191 Magnetic random access memory with ultrathin reference layer US Patent 9871191 Magnetic random access memory with ultrathin reference layer
US Patent 09871191 Magnetic random access memory with ultrathin reference layer
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