Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Wun-Jie Lin0
Han-Jen Yang0
Li-Wei Chu0
Yu-Ti Su0
Date of Patent
January 23, 2018
0Patent Application Number
151718120
Date Filed
June 2, 2016
0Patent Citations Received
Patent Primary Examiner
Patent abstract
An Electro-Static Discharge (ESD) protection circuit includes a plurality of groups of p-type heavily doped semiconductor strips (p+ strips) and a plurality of groups of n-type heavily doped semiconductor strips (n+ strips) forming an array having a plurality of rows and columns. In each of the rows and the columns, the plurality of groups of p+ strips and the plurality of groups of n+ strips are allocated in an alternating layout. The ESD protection circuit further includes a plurality of gate stacks, each including a first edge aligned to an edge of a group in the plurality of groups of p+ strips, and a second edge aligned to an edge of a group in the plurality of groups of n+ strips.
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