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US Patent 9899267 Semiconductor device and manufacturing method thereof

Patent 9899267 was granted and assigned to United Microelectronics Corporation on February, 2018 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
December 25, 2016
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Date of Patent
February 20, 2018
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Patent Application Number
15390527
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Patent Citations Received
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US Patent 11854903 Footing removal in cut-metal process
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US Patent 12112988 Hybrid isolation regions having upper and lower portions with seams
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US Patent 12020988 Fin field effect transistor (FinFET) device structure with dummy fin structure
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US Patent 11837505 Formation of hybrid isolation regions through recess and re-deposition
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US Patent 11948829 FinFET circuit devices with well isolation
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Patent Inventor Names
En-Chiuan Liou
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Yu-Cheng Tung
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
9899267
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