Patent attributes
An array of Geiger-mode avalanche photodiodes is formed in a die and includes: an internal dielectric structure, arranged on the die; and an external dielectric region arranged on the internal dielectric structure. The external dielectric region is formed by an external material that absorbs radiation having a wavelength that falls in a stop-band with low wavelength and transmits radiation having a wavelength that falls in a pass-band with high wavelength, at least part of the pass-band including wavelengths in the infrared. The internal dielectric structure is formed by one or more internal materials that substantially transmit radiation having a wavelength that falls in the stop-band and in the pass-band and have refractive indices that fall in an interval having an amplitude of 0.4. In the stop-band and in the pass-band the external dielectric region has a refractive index with the real part that falls in the above interval.
