US Patent 9905600 Image sensor device and manufacturing method thereof

The present disclosure provides a method of manufacturing an image sensor device. The method includes: forming an etch stop layer on a first substrate; forming a light-sensing region comprising a light sensing quantum structure being able to detect a wavelength greater than about 1.5 um; forming a semiconductive substrate over the light-sensing region, the semiconductive substrate comprising an active component; forming an isolation structure extended through the light-sensing region; selectively removing the first substrate to expose the etch stop layer; and thinning the etch stop layer thereby exposing the light-sensing region.