US Patent 9911595 Selective growth of silicon nitride

Methods and apparatuses for selectively depositing silicon nitride on silicon surfaces relative to silicon oxide surfaces and selectively depositing silicon nitride on silicon oxide surfaces relative to silicon surfaces are provided herein. Methods involve exposing the substrate to an alkene which is selectively reactive with the silicon surface to block the silicon surface by forming an organic moiety on the silicon surface prior to depositing silicon nitride selectively on silicon oxide surfaces using thermal atomic layer deposition. Methods involve exposing the substrate to an alkylsilylhalide which is selectively reactive with the silicon oxide surface to block the silicon oxide surface by forming an organic moiety on the silicon oxide surface prior to depositing silicon nitride selectively on silicon surfaces using thermal atomic layer deposition.