Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Shunpei Yamazaki0
Masayuki Sakakura0
Date of Patent
March 13, 2018
0Patent Application Number
148145970
Date Filed
July 31, 2015
0Patent Citations Received
Patent Primary Examiner
Patent abstract
It is an object to provide a transistor having a new multigate structure in which operating characteristics and reliability are improved. In a transistor having a multigate structure, which includes two gate electrodes electrically connected to each other and a semiconductor layer including two channel regions connected in series formed between a source region and a drain region, and a high concentration impurity region is formed between the two channel regions; the channel length of the channel region adjacent to the source region is longer than the channel length of the channel region adjacent to the drain region.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.