US Patent 9929099 Planarized interlayer dielectric with air gap isolation
Patent 9929099 was granted and assigned to SAMSUNG ELECTRONICS CO., LTD. on March, 2018 by the United States Patent and Trademark Office.
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Patent abstract
A semiconductor device includes an interlayer insulating layer including a first insulating layer on a substrate, and a plurality of interconnections in the first insulating layer. The interlayer insulating layer includes a first region, and a second region including an air gap. The air gap is defined between a pair of the interconnections in the second region. A top surface of the first insulating layer of the first region is lower than a top surface of at least one of the interconnections in the first region.
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US Patent 09929099 Planarized interlayer dielectric with air gap isolation US Patent 9929099 Planarized interlayer dielectric with air gap isolation
Infobox
Patent Number
0992909900
Patent Number
992909900
Edits on 6 Apr, 2023
Golden AI
Infobox
Is a
Patent Applicant
Current Assignee
0
Patent Jurisdiction
Patent Number
099290990
Date of Patent
March 27, 2018
0Patent Application Number
153572990
Date Filed
November 21, 2016
0Patent Primary Examiner
Edits on 27 Sep, 2022
Golden AI
Infobox
Is a
Patent Applicant
Current Assignee
0
Patent Jurisdiction
Patent Number
099290990
Date of Patent
March 27, 2018
0Patent Application Number
153572990
Date Filed
November 21, 2016
0Patent Primary Examiner
Edits on 19 Jan, 2022
Golden AI
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Infobox (+9 properties)
US Patent 09929099 Planarized interlayer dielectric with air gap isolation
Infobox
Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
09929099
Date of patent
March 27, 2018
Patent application number
15357299
Date Filed
November 21, 2016
Patent primary examiner
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