Patent attributes
A pixel architecture having an in-pixel amplifier comprising an NMOS transistor and a depletion-mode NMOS load is disclosed. In one aspect, the pixel architecture comprises a pixel core including a pixel photodiode for generating an output signal in accordance with incident light. Further, the in-pixel amplifier is connected to a pixel core to amplify the output signal before it is stored in a column buffer before being read out at output of the pixel architecture. By having an in-pixel amplifier that can be used for amplification of the output signal inside the pixel architecture, a larger output value is obtained which may be stored inside the pixel architecture on a small capacitor with improved signal-to-noise performance. This in-pixel amplification can also improve the quality of stored signals for global shutter operation.
