Patent 9947827 was granted and assigned to Terahertz Device Corporation on April, 2018 by the United States Patent and Trademark Office.
A device emitting mid-infrared light that comprises a semiconductor substrate of GaSb or closely related material. The device can also comprise epitaxial heterostructures of InAs, GaAs, AISb, and related alloys forming light emitting structures cascaded by tunnel junctions. Further, the device can comprise light emission from the front, epitaxial side of the substrate.