US Patent 9947862 Magnetoresistive memory device
Patent 9947862 was granted and assigned to Toshiba Memory Corporation on April, 2018 by the United States Patent and Trademark Office.
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Patent abstract
According to one embodiment, a magnetoresistive memory device includes a first magnetic layer in which a magnetization direction is variable, a first nonmagnetic layer provided on the first magnetic layer, a second magnetic layer provided on the first nonmagnetic layer, a magnetization direction of the second magnetic layer being invariable, and a second nonmagnetic layer provided on the first magnetic layer, which is opposite the first nonmagnetic layer. The first magnetic layer includes Mo.
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Patent Inventor Names
Daisuke Watanabe0
Hiroyuki Ohtori0
Kazuya Sawada0
Kenichi Yoshino0
Makoto Nagamine0
Tadaaki Oikawa0
Toshihiko Nagase0
Youngmin Eeh0
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US Patent 09947862 Magnetoresistive memory device US Patent 9947862 Magnetoresistive memory device
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Patent Number
099478620
Patent Number
99478620
Edits on 26 Sep, 2022
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Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
099478620
Date of Patent
April 17, 2018
0Patent Application Number
152685070
Date Filed
September 16, 2016
0Patent Primary Examiner
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US Patent 09947862 Magnetoresistive memory device
Infobox
Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
09947862
Date of patent
April 17, 2018
Patent application number
15268507
Date Filed
September 16, 2016
Patent primary examiner
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