US Patent 9953714 Semiconductor device

A semiconductor device includes a first circuit configured to generate a first voltage based on a first current, a second circuit that includes a first transistor of a first conductivity type having a first terminal, a second terminal, and a first gate, the second circuit configured to generate a second voltage based on a voltage difference between the first terminal and the second terminal, and a third circuit configured to compare the first voltage and the second voltage, and generate a third voltage for adjusting a substrate bias of the first transistor, based on the comparison result.