Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
ChoongHyun Lee0
Shogo Mochizuki0
Ruqiang Bao0
Hemanth Jagannathan0
Date of Patent
May 1, 2018
Patent Application Number
15596634
Date Filed
May 16, 2017
Patent Citations Received
Patent Primary Examiner
Patent abstract
Embodiments are directed to a method and resulting structures for a vertical field effect transistor (VFET) having a reduced bottom contact resistance. A multilayered bottom doped region having alternating doped layers and doped sacrificial layers is formed on a substrate. One or more cavities are formed by removing portions of the doped sacrificial layers. A bottom contact is formed over the multilayered bottom doped region. The bottom contact includes one or more conductive flanges that fill the cavities.
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