US Patent 9966136 Semiconductor memory device including variable resistance element
Patent 9966136 was granted and assigned to Toshiba Memory Corporation on May, 2018 by the United States Patent and Trademark Office.
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According to one embodiment, a variable resistance memory includes first to third insulating layers, first and second variable resistance layers, first and second semiconductor layers, and first and second electric conductors. The first insulating layer extends in a first direction. The first and second electric conductors are in contact with the second and third insulating layers respectively. The first to third insulating layers, the first and second variable resistance layers and the first and second semiconductor layers are disposed between the first and second electric conductors in a second direction different from the first direction.
US Patent 09966136 Semiconductor memory device including variable resistance element US Patent 9966136 Semiconductor memory device including variable resistance element
US Patent 09966136 Semiconductor memory device including variable resistance element
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