Patent attributes
Semiconductor devices and methods of forming the same include forming stacks of alternating layers of first channel material and second channel material in a first device region and a second device region. A first layer cap is formed at ends of the layers of first channel material. A second layer cap is formed at ends of the layers of second channel material. The first layer caps are etched away in the first device region. The second layer caps are etched away in the second device region. First source/drain regions are grown in the first device region from exposed ends of the layers of the first channel material. Second source/drain regions are grown in the second device region from exposed ends of the layers of the second channel material.