US Patent 9984932 Semiconductor fin loop for use with diffusion break

A finFET includes a source or a drain including: a first semiconductor fin extending parallel to a second semiconductor fin, and a semiconductor connector fin creating a first semiconductor fin loop by connecting an end of the first semiconductor fin to an end of the second semiconductor fin. A diffusion break isolates the source or the drain, and is positioned about the first semiconductor connector fin and the ends of the first semiconductor fin and the second semiconductor fin. The semiconductor connector fin provides an epitaxial growth surface adjacent the diffusion break. A related method and IC structure are also disclosed.