Patent attributes
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate. The semiconductor device structure also includes an isolation feature over the semiconductor substrate. The fin structure is surrounded by the isolation feature. The semiconductor device structure further includes a gate stack covering the fin structure. In addition, the semiconductor device structure includes a source or drain (S/D) structure covering the fin structure. The semiconductor device structure also includes a conductive contact connected to the S/D structure. The conductive contact includes a first portion and a second portion. The second portion extends from the first portion to the S/D structure. The first portion has a first width adjoining the second portion. The second portion has a second width greater than the first width.
