Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Wensheng Wang0
Date of Patent
June 5, 2018
Patent Application Number
15623710
Date Filed
June 15, 2017
Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device and a manufacturing method for the same are provided in such a manner that the oxygen barrier film and the conductive plug in the base of a capacitor are prevented from being abnormally oxidized. A capacitor is formed by layering a lower electrode, a dielectric film including a ferroelectric substance or a high dielectric substance, and an upper electrode in this order on top of an interlayer insulation film with at least a conductive oxygen barrier film in between, and at least a portion of a side of the conductive oxygen barrier film is covered with an oxygen entering portion or an insulating oxygen barrier film.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
