US Patent RE40485 Semiconductor light-emitting element
Patent RE40485 was granted and assigned to NGK Insulators on September, 2008 by the United States Patent and Trademark Office.
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Patent Inventor Names
Mitsuhiro Tanaka0
Osamu Oda0
Tomohiko Shibata0
Yuji Hori0
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Patent abstract
In a semiconductor light-emitting element, an underlayer is made of AlN layer, and a first cladding layer is made of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer. Then, at least one rare earth metal element is incorporated into the base layer and/or the island-shaped single crystal portions.
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US Patent RE040485 Semiconductor light-emitting element US Patent RE40485 Semiconductor light-emitting element
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Patent Number
RE04048500
Patent Number
RE4048500
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
RE0404850
Date of Patent
September 9, 2008
0Patent Application Number
111405240
Date Filed
May 27, 2005
0Official Website
Patent Primary Examiner
Edits on 24 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
RE0404850
Date of Patent
September 9, 2008
0Patent Application Number
111405240
Date Filed
May 27, 2005
0Official Website
Patent Primary Examiner
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US Patent RE040485 Semiconductor light-emitting element
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
RE040485
Date of patent
September 9, 2008
Patent application number
11140524
Date Filed
May 27, 2005
Patent primary examiner
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