AIXTRON AG

US Patent 7128785 Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates

US Patent 7128786 Process for depositing III-V semiconductor layers on a non-III-V substrate

US Patent 7135073 Method and system for semiconductor crystal production with temperature management

US Patent 7147718 Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates

US Patent 7201942 Coating method

US Patent 7282096 Arrangement comprising a support body and a substrate holder which is driven in rotation and gas-supported thereon

US Patent 7294207 Gas-admission element for CVD processes, and device

US Patent 7332038 Device for depositing in particular crystalline layers on one or more, in particular likewise crystalline substrates

US Patent 7410670 Process and apparatus for depositing single-component or multi-component layers and layer sequences using discontinuous injection of liquid and dissolved starting substances via a multi-channel injection unit

US Patent 7473316 Method of growing nitrogenous semiconductor crystal materials

US Patent 7524532 Process for depositing thin layers on a substrate in a process chamber of adjustable height

US Patent 7625448 Inlet system for an MOCVD reactor

US Patent 7709398 Process and apparatus for depositing semiconductor layers using two process gases, one of which is preconditioned

US Patent 7762208 Loading and unloading apparatus for a coating device