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Changhyun Yi

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Edits on 14 Dec, 2021
"Remove inverse infobox"
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Golden AI
edited on 14 Dec, 2021
Edits made to:
Infobox (-9 properties)
Infobox
Patent primary examiner of
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US Patent 11171133 Semiconductor device
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US Patent 11171207 Transistor with isolation below source and drain
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US Patent 11171211 Group IV and III-V p-type MOSFET with high hole mobility and method of manufacturing the same
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US Patent 11177316 Method of manufacturing light emitting device, light emitting device, and projector
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US Patent 11177348 Silicon carbide semiconductor device
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US Patent 11177351 Semiconductor device including a superlattice with different non-semiconductor material monolayers
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US Patent 11183422 Semiconductor structure and method for manufacturing the same
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US Patent 11189696 Method for preparing self-aligned surface channel field effect transistor and power device
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US Patent 11189706 FinFET structure with airgap and method of forming the same
Edits on 2 Dec, 2021
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Golden AI
edited on 2 Dec, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
‌
US Patent 11189706 FinFET structure with airgap and method of forming the same
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Golden AI
edited on 2 Dec, 2021
Edits on 25 Nov, 2021
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Golden AI
edited on 25 Nov, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
‌
US Patent 11183422 Semiconductor structure and method for manufacturing the same
Edits on 19 Nov, 2021
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Golden AI
edited on 19 Nov, 2021
Golden AI profile picture
Golden AI
edited on 19 Nov, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
‌
US Patent 11177348 Silicon carbide semiconductor device
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Golden AI
edited on 19 Nov, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
‌
US Patent 11177316 Method of manufacturing light emitting device, light emitting device, and projector
Edits on 11 Nov, 2021
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Golden AI
edited on 11 Nov, 2021
Golden AI profile picture
Golden AI
edited on 11 Nov, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
‌
US Patent 11171207 Transistor with isolation below source and drain
Golden AI profile picture
Golden AI
edited on 11 Nov, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
‌
US Patent 11171133 Semiconductor device
"Created via: Entity Importer"
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Golden AI
created this topic on 11 Nov, 2021
Edits made to:
Infobox (+2 properties)
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 Changhyun Yi

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Person
Current Employer
United States Patent and Trademark Office
United States Patent and Trademark Office

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