US Patent 10002925 Strained semiconductor device

A semiconductor device comprises a first semiconductor fin having a first width, the first semiconductor fin is arranged on a first portion of the strain relaxation buffer layer, where the first portion of the strain relaxation buffer layer has a second width and a second semiconductor fin having a width substantially similar to the first width, the second semiconductor fin is arranged on a second portion of the strain relaxation buffer layer, where the second portion of the strain relaxation buffer layer has a third width. A gate stack is arranged over a channel region of the first fin and a channel region of the second fin.