US Patent 11791337 Integrated circuit structure including multi-length source/drain contacts

An IC structure includes first, second, and third circuits. The first circuit includes a first semiconductor fin, a first gate electrode extending across the first semiconductor fin, and a first gate dielectric layer spacing the first gate electrode apart from the first semiconductor fin. The second circuit includes a second semiconductor fin, a second gate electrode extending across the second semiconductor fin, and a second gate dielectric layer spacing the second gate electrode apart from the second semiconductor fin. The third circuit includes a third semiconductor fin, a third gate electrode extending across the third semiconductor fin, and a third gate dielectric layer spacing the third gate electrode apart from the third semiconductor fin. The first gate dielectric layer has a greater thickness than the second gate dielectric layer. The third semiconductor fin has a smaller width than the second semiconductor fin.