Is a
Patent attributes
Patent Applicant
Patent Jurisdiction
Patent Number
Patent Inventor Names
Gi-gwan Park0
Weon-hong Kim0
Ha-jin Lim0
Date of Patent
January 2, 2018
0Patent Application Number
152690010
Date Filed
September 19, 2016
0Patent Citations Received
Patent Primary Examiner
Patent abstract
An integrated circuit device includes a first gate stack formed on a first high dielectric layer and comprising a first work function adjustment metal containing structure and a second gate stack formed on a second high dielectric layer and comprising a second work function adjustment metal containing structure having an oxygen content that is greater than that of the first work function adjustment metal containing structure.
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